BSZ120P03NS3E G Infineon Technologies, BSZ120P03NS3E G Datasheet - Page 8

• Manufacturer Part Number: BSZ120P03NS3E G
• Description: MOSFET P-CH 30V 40A TSDSON-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSZ120P03NS3E G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 1.9V @ 73µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 3360pF @ 15V
• Power - Max: 2.1W
• Mounting Type: Surface Mount
• Package / Case: 8-TSDSON
• Package: S3O8 (3x3mm style SuperSO8)
• Vds (max): -30.0 V
• Rds (on) (max) (@10v): 12.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant