BSO130P03S Infineon Technologies, BSO130P03S Datasheet - Page 4

• Manufacturer Part Number: BSO130P03S
• Description: MOSFET P-CH 30V 9.2A DSO-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO130P03S

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13 mOhm @ 11.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.2A
• Vgs(th) (max) @ Id: 2.2V @ 140µA
• Gate Charge (qg) @ Vgs: 81nC @ 10V
• Input Capacitance (ciss) @ Vds: 3520pF @ 25V
• Power - Max: 1.56W
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 13 m Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: - 11.3 A
• Power Dissipation: 1.56 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Package: SO-8
• Vds (max): -30.0 V
• Rds (on) (max) (@10v): 13.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSO130P03SNT; BSO130P03ST; SP000014729

Rev. 1.1
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
10
10
10
10
10
2.5
1.5
0.5
DS
-1
-2
3
2
1
0
2
1
0
10
A
0
); T
0.01
100
10
0.1
); t
1
0.1
-1
p
A
p
≤10 s
=25 °C
40
1)
10
; D =0
limited by on-state
resistance
1
0
-V
T
A
DS
80
[°C]
[V]
10
10
DC
1
100 µs
10 ms
120
1 ms
10 µs
1 µs
160
10
page 4
100
2
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJS
=f(T
=f(t
10
10
10
10
10
12
10
A
8
6
4
2
0
-1
-2
2
1
0
); |V
10
p
0
100
0.01
10
0.1
0.00001
1
)
0.02
0.05
-5
0.1
0.5
0.2
0.01
GS
single pulse
|≥10 V; t
10
p
0.0001
/T
-4
40
10
p
0.001
≤10 s
-3
T
t
A
10
p
80
[°C]
0.01
[s]
-2
10
0.1
BSO130P03S
-1
120
10
2006-01-18
1
0
160
10
10
1