BSO130P03S Infineon Technologies, BSO130P03S Datasheet - Page 5

• Manufacturer Part Number: BSO130P03S
• Description: MOSFET P-CH 30V 9.2A DSO-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO130P03S

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13 mOhm @ 11.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.2A
• Vgs(th) (max) @ Id: 2.2V @ 140µA
• Gate Charge (qg) @ Vgs: 81nC @ 10V
• Input Capacitance (ciss) @ Vds: 3520pF @ 25V
• Power - Max: 1.56W
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 13 m Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: - 11.3 A
• Power Dissipation: 1.56 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Package: SO-8
• Vds (max): -30.0 V
• Rds (on) (max) (@10v): 13.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSO130P03SNT; BSO130P03ST; SP000014729

Rev. 1.1
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
45
40
35
30
25
20
15
10
40
30
20
10
DS
GS
5
0
0
); T
0
0
); |V
-10 V
j
=25 °C
DS
GS
j
|>2|I
-4.5 V
1
D
|R
1
DS(on)max
-V
-V
-3.5 V
C °150
DS
GS
2
[V]
[V]
C °25
2
3
-2.3 V
-3.2 V
-2.7 V
-2.5 V
-3 V
3
4
page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
40
35
30
25
20
15
10
60
40
20
D
=f(I
5
0
0
); T
0
0
D
j
V 2.5-
); T
=25 °C
GS
j
=25 °C
V 2.7-
10
10
-I
-I
D
D
V 3-
20
[A]
[A]
20
BSO130P03S
V 3.2-
30
2006-01-18
V 3.5-
V 4.5-
V 10-
40
30