IPP260N06N3 G Infineon Technologies, IPP260N06N3 G Datasheet

IPP260N06N3 G

Manufacturer Part Number

IPP260N06N3 G

Description

MOSFET N-CH 60V 27A TO220-3

Manufacturer

Infineon Technologies

Series

OptiMOS™r

Datasheet

1.IPP260N06N3_G.pdf (10 pages)

Specifications of IPP260N06N3 G

Package / Case

TO-220-3 (Straight Leads)

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

26 mOhm @ 27A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

27A

Vgs(th) (max) @ Id

4V @ 11µA

Gate Charge (qg) @ Vgs

15nC @ 10V

Input Capacitance (ciss) @ Vds

1200pF @ 30V

Power - Max

36W

Mounting Type

Through Hole

Gate Charge Qg

11 nC

Minimum Operating Temperature

- 55 C

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

26 mOhms

Forward Transconductance Gfs (max / Min)

24 S, 12 S

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

27 A

Power Dissipation

36 W

Maximum Operating Temperature

+ 175 C

Mounting Style

Through Hole

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

SP000453638

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Features

Maximum ratings,

Parameter

Type

Package

Marking

™

3 Power-Transistor

Symbol Conditions

T T

Product Summary

IPB260N06N3 G IPP260N06N3 G

Value

Unit

Related parts for IPP260N06N3 G

IPP260N06N3 G Summary of contents

Page 1

... Power-Transistor Features R Type Package Marking Maximum ratings, T Parameter IPB260N06N3 G IPP260N06N3 G Product Summary Symbol Conditions Value Unit ...

Page 2

... Parameter Thermal characteristics Electrical characteristics, T Static characteristics IPB260N06N3 G IPP260N06N3 G Symbol Conditions Values Unit min. typ. max. ...

Page 3

... Parameter Dynamic characteristics Reverse Diode IPB260N06N3 G IPP260N06N3 G Symbol Conditions Values Unit min. typ. max. ...

Page 4

... Power dissipation 100 T [° Safe operating area [ Drain current 150 200 0 4 Max. transient thermal impedance IPB260N06N3 G IPP260N06N3 G 50 100 150 T [° [s] p 200 ...

Page 5

... Typ. output characteristics 100 [ Typ. transfer characteristics [ Typ. drain-source on resistance Typ. forward transconductance IPB260N06N3 G IPP260N06N3 [ [A] D 100 60 ...

... Drain-source on-state resistance -60 - [° Typ. capacitances [ Typ. gate threshold voltage 100 140 180 -60 12 Forward characteristics of reverse diode IPB260N06N3 G IPP260N06N3 100 140 T [°C] j 0.5 1 1.5 V [V] SD 180 2 ...

Page 7

... Avalanche characteristics 100 [µ Drain-source breakdown voltage -60 - [° Typ. gate charge 100 1000 0 16 Gate charge waveforms 100 140 180 IPB260N06N3 G IPP260N06N3 [nC] gate ate ...

Page 8

... PG-TO220-3 IPB260N06N3 G IPP260N06N3 G ...

Page 9

... PG-TO263 (D²-Pak) IPB260N06N3 G IPP260N06N3 G ...

Page 10

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. IPB260N06N3 G IPP260N06N3 G ...

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