IPP260N06N3 G Infineon Technologies, IPP260N06N3 G Datasheet - Page 7

• Manufacturer Part Number: IPP260N06N3 G
• Description: MOSFET N-CH 60V 27A TO220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP260N06N3 G

• Package / Case: TO-220-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 26 mOhm @ 27A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 4V @ 11µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 30V
• Power - Max: 36W
• Mounting Type: Through Hole
• Gate Charge Qg: 11 nC
• Minimum Operating Temperature: - 55 C
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 26 mOhms
• Forward Transconductance Gfs (max / Min): 24 S, 12 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 27 A
• Power Dissipation: 36 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000453638

13 Avalanche characteristics
I
15 Drain-source breakdown voltage
V
100
10
70
65
60
55
50
t
1
0.1
-60
R
T
T
-20
I
1
20
t
T
AV
j
10
60
[°C]
[µs]
100
100
140
1000
180
14 Typ. gate charge
V
16 Gate charge waveforms
Q
12
10
V
8
6
4
2
0
V
Q
0
V
I
Q
2
IPB260N06N3 G IPP260N06N3 G
4
Q
Q
gate
g
Q
6
[nC]
Q
8
10
Q
g ate
12