IPD50N04S3-08 Infineon Technologies, IPD50N04S3-08 Datasheet - Page 4

• Manufacturer Part Number: IPD50N04S3-08
• Description: MOSFET N-CH 40V 50A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD50N04S3-08

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 40µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 2350pF @ 25V
• Power - Max: 68W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8 m Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 68 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD50N04S3-08; IPD50N04S3-08TR; SP000261218

Rev. 1.0
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
= f(V
= f(T
1000
80
70
60
50
40
30
20
10
100
0
10
1
DS
0
0.1
C
); T
); V
p
C
GS
= 25 °C; D = 0
≥ 6 V
50
1
T
V
C
100
DS
[°C]
[V]
1 ms
100 µs
10
150
10 µs
1 µs
200
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
= f(T
60
40
20
10
10
10
= f(t
10
10
0
-1
-2
-3
1
0
C
0
10
); V
p
-6
0.5
0.1
0.05
0.01
)
single pulse
GS
10
≥ 6 V
p
/T
-5
50
10
-4
T
t
C
100
10
p
[°C]
[s]
-3
IPD50N04S3-08
10
-2
150
10
2007-05-03
-1
200
10
0