IPD50N04S3-08 Infineon Technologies, IPD50N04S3-08 Datasheet - Page 5

• Manufacturer Part Number: IPD50N04S3-08
• Description: MOSFET N-CH 40V 50A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD50N04S3-08

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 40µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 2350pF @ 25V
• Power - Max: 68W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8 m Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 68 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD50N04S3-08; IPD50N04S3-08TR; SP000261218

Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
200
160
120
200
160
120
80
40
80
40
0
0
DS
GS
0
2
); T
); V
GS
j
j
DS
= 25 °C
10 V
3
= 6V
2
4
V
V
DS
GS
4
5
[V]
[V]
6
6
7
-55 °C
175 °C
25 °C
6.5 V
7 V
5.5 V
6 V
5 V
page 5
8
8
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. drain-source on-state resistance
R
DS(on)
DS(on)
20
18
16
14
12
10
11
10
8
6
4
2
9
8
7
6
5
4
= f(I
= f(T
-60
0
D
j
); T
); I
GS
5.5 V
-20
20
D
j
= 25 °C
= 50 A; V
40
20
6 V
GS
T
I
D
j
60
60
= 10 V
[°C]
[A]
6.5 V
IPD50N04S3-08
100
80
100
140
2007-05-03
7 V
10 V
120
180