IPD50N06S2-14 Infineon Technologies, IPD50N06S2-14 Datasheet - Page 3
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IPD50N06S2-14
Manufacturer Part Number
IPD50N06S2-14
Description
MOSFET N-CH 55V 50A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPD50N06S2-14.pdf
(9 pages)
Specifications of IPD50N06S2-14
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
14.4 mOhm @ 32A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 80µA
Gate Charge (qg) @ Vgs
52nC @ 10V
Input Capacitance (ciss) @ Vds
1485pF @ 25V
Power - Max
136W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
14.4 m Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
2.1 V
Continuous Drain Current
50 A
Power Dissipation
136 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000252171
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPD50N06S2-14
Manufacturer:
INF
Quantity:
9 999
Company:
Part Number:
IPD50N06S2-14
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1.1
1)
information see Application Note ANPS071E at www.infineon.com/optimos
2)
3)
connection. PCB is vertical in still air.
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Current is limited by bondwire; with an RthJC=1.1 K/W the chip is able to carry 69 A. For detailed
Defined by design. Not subject to production test.
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2)
2)
2)
2)
2)
2)
Symbol
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
V
f =1 MHz
V
I
V
V
T
V
T
V
di
V
di
D
C
j
GS
DD
DD
GS
GS
R
R
=50 A, R
=25 °C
F
F
page 3
=25 °C
=30 V, I
=30 V, I
/dt =100 A/µs
/dt =100 A/µs
=0 V, V
=30 V, V
=44 V, I
=0 to 10 V
=0 V, I
Conditions
F
F
F
G
2
DS
=50 A,
=I
=I
D
=7.5
(one layer, 70 µm thick) copper area for drain
GS
=50 A,
=25 V,
S
S
=10 V,
,
,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
1485
typ.
464
167
5.4
13
29
30
19
16
39
45
74
8
1
-
-
IPD50N06S2-14
max.
200
1.3
11
24
52
50
-
-
-
-
-
-
-
-
-
-
2008-10-21
Unit
pF
ns
nC
V
A
V
ns
nC