IPD50N06S2-14 Infineon Technologies, IPD50N06S2-14 Datasheet - Page 7
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IPD50N06S2-14
Manufacturer Part Number
IPD50N06S2-14
Description
MOSFET N-CH 55V 50A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPD50N06S2-14.pdf
(9 pages)
Specifications of IPD50N06S2-14
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
14.4 mOhm @ 32A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 80µA
Gate Charge (qg) @ Vgs
52nC @ 10V
Input Capacitance (ciss) @ Vds
1485pF @ 25V
Power - Max
136W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
14.4 m Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
2.1 V
Continuous Drain Current
50 A
Power Dissipation
136 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000252171
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPD50N06S2-14
Manufacturer:
INF
Quantity:
9 999
Company:
Part Number:
IPD50N06S2-14
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1.1
13 Typical avalanche energy
E
parameter: I
15 Typ. drain-source breakdown voltage
V
AS
BR(DSS)
1000
= f(T
800
600
400
200
66
64
62
60
58
56
54
52
50
0
-60
25
= f(T
j
)
D
12.5 A
25 A
50 A
j
); I
-20
50
D
= 1 mA
75
20
T
T
j
100
j
60
[°C]
[°C]
100
125
140
150
180
175
page 7
14 Typ. gate charge
V
16 Gate charge waveforms
GS
V
V
= f(Q
GS
GS
12
10
8
6
4
2
0
0
gate
Q
Q
gs
gs
); I
D
= 50 A pulsed
10
Q
Q
g
g
Q
Q
Q
20
gate
gd
gd
11 V
[nC]
IPD50N06S2-14
30
Q
Q
44 V
gate
gate
2008-10-21
40