BUZ73AL Infineon Technologies, BUZ73AL Datasheet - Page 2

• Manufacturer Part Number: BUZ73AL
• Description: MOSFET N-CH 200V 5.5A TO-220AB
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BUZ73AL

• Package / Case: TO-220AB
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 600 mOhm @ 3.5A, 5V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 840pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.6 Ohm @ 5 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.5 A
• Power Dissipation: 40000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BUZ73AL; BUZ73ALIN; BUZ73ALX; BUZ73ALXK; SP000011375

Electrical Characteristics, at T
Rev. 2.3
Parameter
Static Characteristics
Drain- source breakdown voltage
V
Gate threshold voltage
V
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-Source on-resistance
V
GS
GS =
DS
DS
GS
GS
= 0 V, I
= 200 V, V
= 200 V, V
= 20 V, V
= 5 V, I
V
DS,
I
D
D
D
= 1 mA
= 0.25 mA, T
= 3.5 A
DS
GS
GS
= 0 V
= 0 V, T
= 0 V, T
j
j
j
= 25 ˚C
= 125 ˚C
= 25 ˚C
j
= 25˚C, unless otherwise specified
I
R
Symbol
V
V
I
GSS
DSS
Page 2
(BR)DSS
GS(th)
DS(on)
-
-
-
-
min.
200
1.2
Values
typ.
-
0.1
10
10
0.5
1.6
max.
-
100
0.6
2
1
100
BUZ 73AL
2009-04-01
µA
nA
Ω
Unit
V