BUZ73 E3046 Infineon Technologies, BUZ73 E3046 Datasheet
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Manufacturer Part Number
BUZ73 E3046
Description
MOSFET N-CH 200V 7A TO-220AB
Manufacturer
Infineon Technologies
Specifications of BUZ73 E3046
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
4V @ 1mA
Input Capacitance (ciss) @ Vds
530pF @ 25V
Power - Max
40W
Mounting Type
Through Hole
Package / Case
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Other names
BUZ73E3046X BUZ73E3046XK SP000011963
Rev. 2.3
SIPMOS
Rev. 2.2
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
• N channel
• Enhancement mode
• Avalanche-rated
Type
BUZ 73
Maximum Ratings
Parameter
Continuous drain current
T
Pulsed drain current
T
Avalanche current,limited by T
Avalanche energy,periodic limited by T
Avalanche energy, single pulse
I
L = 3.67 mH, T
Gate source voltage
Power dissipation
T
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
D
C
C
C
= 7 A, V
= 28 ˚C
= 25 ˚C
= 25 ˚C
®
Power Transistor
DD
= 50 V, R
j
= 25 ˚C
V
200 V
DS
GS
= 25
jmax
I
7 A
D
Ω
jmax
R
0.4
Page 1
DS(on )
Ω
Page 1
I
I
I
E
E
V
P
T
T
R
R
Symbol
D
Dpuls
AR
j
stg
AR
AS
GS
tot
thJC
thJA
Package
PG-TO220-3
Pin 1
G
55 / 150 / 56
-55 ... + 150
-55 ... + 150
Values
≤
±
E
120
75
Pb-free
Yes
6.5
40
28
7
7
3.1
20
Pin 2
D
2009-03-25
2007-01-16
BUZ 73
˚C
K/W
Unit
A
mJ
V
W
Pin 3
S
Related parts for BUZ73 E3046
BUZ73 E3046 Summary of contents
SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated V Type DS BUZ 73 200 V Maximum Ratings Parameter Continuous drain current ˚C C Pulsed drain current ˚C C Avalanche current,limited ...
Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage 0.25 mA ˚ Gate threshold voltage DS, D ...
Electrical Characteristics Parameter Dynamic Characteristics Transconductance ≥ 4 DS(on)max, D Input capacitance MHz GS DS ...
Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current = 25 ˚ Inverse diode direct current,pulsed ˚C C Inverse diode forward voltage ...
Power dissipation = ƒ tot tot Safe operating area = ƒ parameter: D ...
Typ. output characteristics = ƒ parameter µ 40W tot ...
Drain-source on-resistance = ƒ (on) j parameter 4 1.9 Ω 1 (on) 1.4 1.2 1.0 0.8 98% 0.6 typ 0.4 0.2 0.0 -60 -20 ...
T Avalanche energy E AS parameter Ω 3. 130 mJ 110 E AS 100 ...
Rev. 2.3 Page 9 BUZ 73 2009-03-25 ...
Rev. 2.3 Page 10 BUZ 73 2009-03-25 ...
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