NTTFS4800NTWG ON Semiconductor, NTTFS4800NTWG Datasheet - Page 4

• Manufacturer Part Number: NTTFS4800NTWG
• Description: MOSFET N-CH 30V 5A 8WDFN
• Manufacturer: ON Semiconductor

Specifications of NTTFS4800NTWG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 16.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 964pF @ 15V
• Power - Max: 860mW
• Mounting Type: Surface Mount
• Package / Case: 8-WDFN
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11.1 Ohms
• Forward Transconductance Gfs (max / Min): 28 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 8.3 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 8.4 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.030
0.028
0.026
0.024
0.022
0.020
0.018
0.016
0.014
0.012
0.010
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
50
40
30
20
10
0
−50
3
0
I
V
D
GS
7.5 V
= 20 A
Figure 5. On−Resistance Variation with
−25
= 10 V
Figure 1. On−Region Characteristics
10 V
V
0.5
4
DS
Figure 3. On−Resistance vs. V
T
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
0
5 V
5
1
25
Temperature
4.6 V
6
V
GS
1.5
50
4.8 V
(V)
7
75
T
J
2
= 25°C
TYPICAL CHARACTERISTICS
8
100
GS
I
T
D
2.5
J
= 28 A
= 25°C
9
125
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4.4 V
4.2 V
4.0 V
3.6 V
3.4 V
3.2 V
3.0 V
3.8 V
150
10
3
4
10,000
0.042
0.038
0.034
0.026
0.022
0.018
0.014
0.006
0.002
1000
0.03
0.01
100
40
30
20
10
10
0
10
1
5
Figure 4. On−Resistance vs. Drain Current and
V
T
V
Figure 6. Drain−to−Source Leakage Current
DS
J
GS
= 25°C
≥ 10 V
= 0 V
V
V
15
Figure 2. Transfer Characteristics
DS
GS
10
, DRAIN−TO−SOURCE VOLTAGE (V)
T
, GATE−TO−SOURCE VOLTAGE (V)
J
2
= 125°C
I
T
D
J
, DRAIN CURRENT (A)
20
= 25°C
Gate Voltage
15
vs. Voltage
V
T
V
T
T
J
GS
J
GS
J
= 150°C
= 125°C
= 85°C
25
= 4.5 V
= 10 V
3
T
J
20
= −55°C
30
4
25
35
30
40
5