NTTFS4800NTWG ON Semiconductor, NTTFS4800NTWG Datasheet - Page 5

• Manufacturer Part Number: NTTFS4800NTWG
• Description: MOSFET N-CH 30V 5A 8WDFN
• Manufacturer: ON Semiconductor

Specifications of NTTFS4800NTWG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 16.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 964pF @ 15V
• Power - Max: 860mW
• Mounting Type: Surface Mount
• Package / Case: 8-WDFN
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11.1 Ohms
• Forward Transconductance Gfs (max / Min): 28 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 8.3 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 8.4 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1600
1400
1200
1000
0.01
800
600
400
200
100
100
0.1
10
10
0
1
1
0.1
0
1
R
Thermal Limit
Package Limit
V
Single Pulse
T
Figure 9. Resistive Switching Time Variation
V
I
V
Figure 11. Maximum Rated Forward Biased
D
C
DS(on)
GS
DD
GS
= 15 A
= 25°C
= 20 V
= 15 V
= 10 V
V
V
5
DS
DS
Figure 7. Capacitance Variation
Limit
C
, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN−TO−SOURCE VOLTAGE (V)
rss
R
G
Safe Operating Area
vs. Gate Resistance
, GATE RESISTANCE (W)
10
1
C
C
oss
iss
15
10
20
10
TYPICAL CHARACTERISTICS
V
T
GS
J
25
= 25°C
100 ms
10 ms
10 ms
1 ms
dc
= 0 V
http://onsemi.com
t
t
d(on)
d(off)
t
t
f
r
100
30
100
5
10
20
18
16
14
12
10
40
35
30
25
20
15
10
9
8
7
6
5
4
3
2
1
0
8
6
4
2
0
5
0
0.4
25
0
Figure 10. Diode Forward Voltage vs. Current
V
T
Qgs
Figure 12. Maximum Avalanche Energy vs.
Drain−to−Source Voltage vs. Total Charge
GS
J
T
= 25°C
J
2
, STARTING JUNCTION TEMPERATURE (°C)
= 0 V
V
0.5
SD
50
Starting Junction Temperature
Figure 8. Gate−to−Source and
, SOURCE−TO−DRAIN VOLTAGE (V)
4
Qg, TOTAL GATE CHARGE (nC)
Qgd
0.6
6
75
QT
8
0.7
10
100
0.8
12
V
V
I
T
D
14
J
DD
GS
125
= 20 A
= 25°C
0.9
I
= 15 V
= 10 V
D
= 27 A
16
150
1.0
18