NTTFS4800NTWG ON Semiconductor, NTTFS4800NTWG Datasheet - Page 5
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NTTFS4800NTWG
Manufacturer Part Number
NTTFS4800NTWG
Description
MOSFET N-CH 30V 5A 8WDFN
Manufacturer
ON Semiconductor
Datasheet
1.NTTFS4800NTWG.pdf
(7 pages)
Specifications of NTTFS4800NTWG
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
16.6nC @ 10V
Input Capacitance (ciss) @ Vds
964pF @ 15V
Power - Max
860mW
Mounting Type
Surface Mount
Package / Case
8-WDFN
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
11.1 Ohms
Forward Transconductance Gfs (max / Min)
28 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
8.3 A
Power Dissipation
2.2 W
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Gate Charge Qg
8.4 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
1600
1400
1200
1000
0.01
800
600
400
200
100
100
0.1
10
10
0
1
1
0.1
0
1
R
Thermal Limit
Package Limit
V
Single Pulse
T
Figure 9. Resistive Switching Time Variation
V
I
V
Figure 11. Maximum Rated Forward Biased
D
C
DS(on)
GS
DD
GS
= 15 A
= 25°C
= 20 V
= 15 V
= 10 V
V
V
5
DS
DS
Figure 7. Capacitance Variation
Limit
C
, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN−TO−SOURCE VOLTAGE (V)
rss
R
G
Safe Operating Area
vs. Gate Resistance
, GATE RESISTANCE (W)
10
1
C
C
oss
iss
15
10
20
10
TYPICAL CHARACTERISTICS
V
T
GS
J
25
= 25°C
100 ms
10 ms
10 ms
1 ms
dc
= 0 V
http://onsemi.com
t
t
d(on)
d(off)
t
t
f
r
100
30
100
5
10
20
18
16
14
12
10
40
35
30
25
20
15
10
9
8
7
6
5
4
3
2
1
0
8
6
4
2
0
5
0
0.4
25
0
Figure 10. Diode Forward Voltage vs. Current
V
T
Qgs
Figure 12. Maximum Avalanche Energy vs.
Drain−to−Source Voltage vs. Total Charge
GS
J
T
= 25°C
J
2
, STARTING JUNCTION TEMPERATURE (°C)
= 0 V
V
0.5
SD
50
Starting Junction Temperature
Figure 8. Gate−to−Source and
, SOURCE−TO−DRAIN VOLTAGE (V)
4
Qg, TOTAL GATE CHARGE (nC)
Qgd
0.6
6
75
QT
8
0.7
10
100
0.8
12
V
V
I
T
D
14
J
DD
GS
125
= 20 A
= 25°C
0.9
I
= 15 V
= 10 V
D
= 27 A
16
150
1.0
18