NTTFS4800NTWG ON Semiconductor, NTTFS4800NTWG Datasheet - Page 6

• Manufacturer Part Number: NTTFS4800NTWG
• Description: MOSFET N-CH 30V 5A 8WDFN
• Manufacturer: ON Semiconductor

Specifications of NTTFS4800NTWG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 16.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 964pF @ 15V
• Power - Max: 860mW
• Mounting Type: Surface Mount
• Package / Case: 8-WDFN
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11.1 Ohms
• Forward Transconductance Gfs (max / Min): 28 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 8.3 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 8.4 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
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0.000001
Duty Cycle = 50%
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5%
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1%
Single Pulse
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0.001
TYPICAL CHARACTERISTICS
Figure 13. Thermal Response
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PULSE TIME (sec)
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