IPI80P03P4L-07 Infineon Technologies, IPI80P03P4L-07 Datasheet - Page 4
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IPI80P03P4L-07
Manufacturer Part Number
IPI80P03P4L-07
Description
MOSFET P-CH 30V 80A TO262-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPI80P03P4L-07.pdf
(9 pages)
Specifications of IPI80P03P4L-07
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7.2 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2V @ 130µA
Gate Charge (qg) @ Vgs
80nC @ 10V
Input Capacitance (ciss) @ Vds
5700pF @ 25V
Power - Max
88W
Mounting Type
Through Hole
Package / Case
TO-262-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPI80P03P4L-07
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1.0
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
= f(V
= f(T
1000
100
100
80
60
40
20
10
0
1
DS
0.1
0
C
); T
); V
p
C
GS
= 25 °C; D = 0; SMD
≤ -6V
50
1
-V
T
C
100
DS
[°C]
1 ms
[V]
100 µs
10
10 µs
150
1 µs
200
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
= f(T
100
10
10
10
= f(t
10
10
80
60
40
20
0
-1
-2
-3
1
0
C
10
); V
0
p
-6
)
0.05
0.01
0.1
single pulse
0.5
GS
IPI80P03P4L-07, IPP80P03P4L-07
10
≤ -6V; SMD
p
/T
-5
50
10
-4
T
t
C
100
10
p
[°C]
[s]
-3
IPB80P03P4L-07
10
-2
150
10
2008-07-29
-1
200
10
0