IPI80P03P4L-07 Infineon Technologies, IPI80P03P4L-07 Datasheet - Page 7

• Manufacturer Part Number: IPI80P03P4L-07
• Description: MOSFET P-CH 30V 80A TO262-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPI80P03P4L-07

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.2 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 130µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 5700pF @ 25V
• Power - Max: 88W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.0
13 Avalanche energy
E
parameter: I
15 Typ. gate charge
V
parameter: V
AS
GS
300
250
200
150
100
= f(T
= f(Q
50
0
12
10
8
6
4
2
0
25
0
20 A
j
80 A
40 A
)
gate
D
); I
DD
10
D
= -80 A pulsed
20
75
Q
30
T
gate
j
[°C]
[nC]
40
125
50
-6V
60
-24V
175
70
page 7
14 Drain-source breakdown voltage
V
16 Gate charge waveforms
BR(DSS)
V
V
GS
GS
33
32
31
30
29
28
-60
= f(T
Q
Q
gs
gs
j
IPI80P03P4L-07, IPP80P03P4L-07
); I
-20
D
= -1 mA
Q
Q
20
g
g
Q
Q
T
gd
gd
j
60
[°C]
IPB80P03P4L-07
100
Q
Q
gate
gate
140
2008-07-29
180