2SK3712-Z-E1-AZ Renesas Electronics America, 2SK3712-Z-E1-AZ Datasheet - Page 5

• Manufacturer Part Number: 2SK3712-Z-E1-AZ
• Description: MOSFET N-CH 250V MP-3Z/TO-252
• Manufacturer: Renesas Electronics America

Specifications of 2SK3712-Z-E1-AZ

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 580 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4.5V @ 1mA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (T
0.01
100
120
100
0.1
10
80
60
40
20
1
0
0.1
0
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
T
Single pulse
C
= 25°C
25
V
DS
T
(at V
R
C
- Drain to Source Voltage - V
1
DS(on)
50
- Case Temperature - °C
GS
1000
0.01
I
Limited
D(DC)
100
= 10 V)
0.1
100
10
1
= 9.0 A
Power dissipation limited
75
μ
10
Single pulse
R
R
100
I
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
D(pulse)
th(ch-A)
th(ch-C)
1 m
= 27 A
125
: T
: T
A
100
A
= 25°C)
C
= 25°C
= 25°C
PW = 100 μs
150
10 m
10 ms
1 ms
Data Sheet D16372EJ3V0DS
1000
175
PW - Pulse Width - s
100m
1
R
th(ch-C)
50
40
30
20
10
R
0
th(ch-A)
0
10
= 3.125°C/W
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
= 125°C/W
25
T
C
- Case Temperature - °C
50
100
75
1000
100
2SK3712
125
150
175
3