2SK3712-Z-E1-AZ Renesas Electronics America, 2SK3712-Z-E1-AZ Datasheet - Page 7

• Manufacturer Part Number: 2SK3712-Z-E1-AZ
• Description: MOSFET N-CH 250V MP-3Z/TO-252
• Manufacturer: Renesas Electronics America

Specifications of 2SK3712-Z-E1-AZ

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 580 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4.5V @ 1mA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1.75
1.25
0.75
0.25
100
0.01
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100
1.5
0.5
10
0.1
10
1
2
1
0
1
0.1
-50
0
V
V
R
V
Pulsed
V
Pulsed
DD
GS
G
GS
GS
t
-25
d(off)
= 0 Ω
SWITCHING CHARACTERISTICS
= 125 V
= 10 V
= 0 V
V
= 10 V
0.25
F(S-D)
t
T
d(on)
ch
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
t
t
0
f
r
- Channel Temperature - °C
- Source to Drain Voltage - V
I
D
1
25
0.5
- Drain Current - A
50
0.75
75
10
100
1
I
D
125
= 9.0 A
4.5 A
1.25
150
Data Sheet D16372EJ3V0DS
100
175
1.5
250
200
150
100
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
1000
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
100
10
0
10
1
1
0
0.1
0.1
I
D
= 9.0 A
1
di/dt = 100 A/ μ s
V
V
f = 1 MHz
GS
GS
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
2
= 0 V
= 0 V
V
I
F
DS
3
- Diode Forward Current - A
Q
- Drain to Source Voltage - V
4
1
G
V
- Gate Charge - nC
DD
5
1
= 200 V
62.5 V
6
125 V
V
DS
7
10
8
9 10 11 12 13 14 15
10
2SK3712
100
V
GS
C
C
C
oss
rss
iss
1000
100
15
12
9
6
3
0
5