IPD60R520C6 Infineon Technologies, IPD60R520C6 Datasheet
IPD60R520C6
Manufacturer Part Number
IPD60R520C6
Description
MOSFET N-CH 600V 8.1A TO252
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.IPD60R520C6.pdf
(17 pages)
Specifications of IPD60R520C6
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
520 mOhm @ 2.8A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
8.1A
Vgs(th) (max) @ Id
3.5V @ 230µA
Gate Charge (qg) @ Vgs
23.4nC @ 10V
Input Capacitance (ciss) @ Vds
512pF @ 100V
Power - Max
66W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (5 leads + tab)
Transistor Polarity
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.47ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
30V
Operating Temperature Range
-55°C To +150°C
Transistor Case
RoHS Compliant
Transistor Case Style
TO-252
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
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Manufacturer
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Price
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Part Number:
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Manufacturer:
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Part Number:
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Manufacturer:
INFINEON
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... Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system ...