IPD60R520C6 Infineon Technologies, IPD60R520C6 Datasheet - Page 15

• Manufacturer Part Number: IPD60R520C6
• Description: MOSFET N-CH 600V 8.1A TO252
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPD60R520C6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 520 mOhm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 8.1A
• Vgs(th) (max) @ Id: 3.5V @ 230µA
• Gate Charge (qg) @ Vgs: 23.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 512pF @ 100V
• Power - Max: 66W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (5 leads + tab)
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.47ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 30V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-252
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant