BUZ32 Infineon Technologies, BUZ32 Datasheet - Page 2

• Manufacturer Part Number: BUZ32
• Description: MOSFET N-CH 200V 9.5A TO220AB
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BUZ32

• Package / Case: TO-220AB
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9.5A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 530pF @ 25V
• Power - Max: 75W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.4 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.5 A
• Power Dissipation: 75000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BUZ32; BUZ32IN; BUZ32X; BUZ32XK; SP000011345

Electrical Characteristics, at T
Rev. 2.3
Parameter
Static Characteristics
Drain- source breakdown voltage
V
Gate threshold voltage
V
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-Source on-resistance
V
GS
GS =
DS
DS
GS
GS
= 200 V, V
= 200 V, V
= 0 V, I
= 20 V, V
= 10 V, I
V
DS,
I
D
D
= 1 mA
D
= 0.25 mA, T
DS
GS
GS
= 6 A
= 0 V
= 0 V, T
= 0 V, T
j
j
j
= 25 ˚C
= 125 ˚C
= 25 ˚C
j
= 25˚C, unless otherwise specified
Page 2
Symbol
V
V
I
I
R
GSS
DSS
(BR)DSS
GS(th)
DS(on)
-
-
-
min.
-
2.1
200
Values
typ.
-
0.1
10
10
0.3
3
max.
-
100
0.4
4
1
100
2009-04-08
BUZ 32
nA
Ω
Unit
V
µA