BUZ32 Infineon Technologies, BUZ32 Datasheet - Page 9
![MOSFET N-CH 200V 9.5A TO220AB](/photos/5/61/56111/buz32_sml.jpg)
BUZ32
Manufacturer Part Number
BUZ32
Description
MOSFET N-CH 200V 9.5A TO220AB
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BUZ32.pdf
(10 pages)
Specifications of BUZ32
Package / Case
TO-220AB
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
9.5A
Vgs(th) (max) @ Id
4V @ 1mA
Input Capacitance (ciss) @ Vds
530pF @ 25V
Power - Max
75W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.4 Ohm @ 10 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9.5 A
Power Dissipation
75000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BUZ32
BUZ32IN
BUZ32X
BUZ32XK
SP000011345
BUZ32IN
BUZ32X
BUZ32XK
SP000011345
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BUZ 32
Page 9
Rev. 2.3
2009-04-08