SPD50N03S2L-06 G Infineon Technologies, SPD50N03S2L-06 G Datasheet - Page 4

• Manufacturer Part Number: SPD50N03S2L-06 G
• Description: MOSFET N-CH 30V 50A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPD50N03S2L-06 G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.4 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2V @ 85µA
• Gate Charge (qg) @ Vgs: 68nC @ 10V
• Input Capacitance (ciss) @ Vds: 2530pF @ 25V
• Power - Max: 136W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0064 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 136 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000443924

1 Power dissipation
P
parameter: V
3 Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
= f (T
10
10
10
10
150
120
110
100
W
A
90
80
70
60
50
40
30
20
10
0
3
2
1
0
10
0
SPD50N03S2L-06
SPD50N03S2L-06
DS
-1
C
20
)
)
GS
40
60
4 V
10
0
C
80
= 25 °C
100 120 140 160
10
1
t
p = 7.6µs
V
10 µs
100 µs
1 ms
T
V
°C
C
DS
190
10
Page 4
2
2 Drain current
I
parameter: V
4 Max. transient thermal impedance
Z
parameter : D = t
D
thJC
= f (T
K/W
10
10
10
10
10
10
A
55
45
40
35
30
25
20
15
10
5
0
= f (t
-1
-2
-3
-4
0
1
0
10
C
SPD50N03S2L-06
SPD50N03S2L-06
)
-7
20
p
)
10
single pulse
GS
40
-6
10
p
10 V
60
/T
-5
80
10
SPD50N03S2L-06
-4
100 120 140 160
10
-3
10
-2
D = 0.50
-0 -2008
0.20
0.10
0.05
0.02
0.01
T
t
s
°C
p
C
190
10
0