SPD50N03S2L-06 G Infineon Technologies, SPD50N03S2L-06 G Datasheet - Page 5

• Manufacturer Part Number: SPD50N03S2L-06 G
• Description: MOSFET N-CH 30V 50A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPD50N03S2L-06 G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.4 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2V @ 85µA
• Gate Charge (qg) @ Vgs: 68nC @ 10V
• Input Capacitance (ciss) @ Vds: 2530pF @ 25V
• Power - Max: 136W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0064 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 136 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000443924

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
= f (V
120
100
A
A
90
80
70
60
50
40
30
20
10
60
50
45
40
35
30
25
20
15
10
0
5
0
0
0
DS
SPD50N03S2L-06
GS
P
0.5
tot
); T
0.5
i
); V
= 136W
p
p
= 80 µs
= 80 µs
h
1
j
=25°C
DS
1
1.5
2 x I
1.5
2
D
2.5
2
x R
3
DS(on)max
2.5
3.5
g
e
c
a
3
d
f
b
V
4
GS
a
b
c
d
e
f
g
h
i
V
[V]
V
V
V
DS
GS
10.0
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.5
4
5
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: g
fs
DS(on)
= f(I
S
21
18
16
14
12
10
90
70
60
50
40
30
20
10
8
6
4
2
0
0
0
0
D
SPD50N03S2L-06
= f (I
V
); T
GS
3.2
d
10
[V] =
3.4
j
20
e
=25°C
D
fs
GS
)
3.6
20
f
=10V
d
40
g
3.8
30
4.5
h
SPD50N03S2L-06
60
40
10.0
e
i
50
80
f
60
100
-0 -2008
70
g
I
A
i
h
D
I
A
D
130
85