IPB80P03P4-05 Infineon Technologies, IPB80P03P4-05 Datasheet

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IPB80P03P4-05

Manufacturer Part Number
IPB80P03P4-05
Description
MOSFET P-CH 30V 80A TO263-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPB80P03P4-05

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.7 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 253µA
Gate Charge (qg) @ Vgs
130nC @ 10V
Input Capacitance (ciss) @ Vds
10300pF @ 25V
Power - Max
137W
Mounting Type
Surface Mount
Package / Case
TO-263-2, D²Pak (2 leads + Tab), TO-263AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPB80P03P4-05
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1.0
OptiMOS
Features
• P-channel - Normal Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
IPB80P03P4-05
IPI80P03P4-05
IPP80P03P4-05
®
-P2 Power-Transistor
2)
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
j
=25 °C, unless otherwise specified
1)
Symbol
I
I
E
I
V
P
T
-
D
D,pulse
AS
j
AS
GS
tot
, T
Marking
4P0305
4P0305
4P0305
stg
T
V
T
V
T
I
-
-
T
-
-
D
C
C
C
C
GS
GS
=-40A
page 1
=25°C,
=100°C,
=25°C
=25 °C
=-10V
=-10V
Conditions
PG-TO263-3-2
2)
Product Summary
V
R
I
D
DS
DS(on)
(SMD Version)
IPI80P03P4-05, IPP80P03P4-05
PG-TO262-3-1
-55 ... +175
55/175/56
Value
-320
410
±20
137
-80
-80
-80
IPB80P03P4-05
PG-TO220-3-1
-30
-80
4.7
2008-09-30
Unit
A
mJ
A
V
W
°C
V
m
A

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IPB80P03P4-05 Summary of contents

Page 1

... I D PG-TO263-3-2 Marking 4P0305 4P0305 4P0305 Symbol Conditions T =25° =-10V GS T =100° =-10V =25°C D,pulse =-40A =25 °C tot stg - - page 1 IPB80P03P4-05 IPI80P03P4-05, IPP80P03P4-05 -30 4.7 -80 PG-TO262-3-1 PG-TO220-3-1 Value Unit -80 A -80 -320 410 mJ -80 A ±20 V 137 W -55 ... +175 °C 55/175/56 2008-09- ...

Page 2

... I =-253µA GS(th =-24V DSS T =25° =-24V =125° =-16V, V GSS =-10V, I =-80A DS(on =-10V, I =-80A SMD version page 2 IPB80P03P4-05 IPI80P03P4-05, IPP80P03P4-05 Values min. typ. max 1 -30 - -2.0 -3.0 -4.0 =0V, - -0.05 -1 =0V, - -20 -200 = -100 - 4.1 - 3.8 4.7 Unit K/W ...

Page 3

... C I S,pulse V =0V, I =-80A =25° =-15V, I =-80A /dt =-100A/µ 1.1K/W the chip is able to carry -146A at 25°C. thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPB80P03P4-05 IPI80P03P4-05, IPP80P03P4-05 Values Unit min. typ. max. - 7900 10300 pF - 2340 3040 - 50 100 - ...

Page 4

... DS Rev. 1.0 2 Drain current I = f(T D 100 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µs 10 µs 10 100 µ 100 [V] page 4 IPB80P03P4-05 IPI80P03P4-05, IPP80P03P4- ≤ -6V; SMD 100 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 150 200 - 2008-09-30 ...

Page 5

... GS Rev. 1.0 6 Typ. drain-source on-state resistance DS(on) parameter 6. [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 6 -55 °C 175 °C 25 ° - [V] page 5 IPB80P03P4-05 IPI80P03P4-05, IPP80P03P4- °C; SMD -5V -5.5V - 160 240 - -10 V; SMD - 100 T [°C] j -6.5V -7V -10V 320 140 180 2008-09-30 ...

Page 6

... SD Rev. 1.0 10 Typ. capacitances 2530µ 100 140 180 12 Avalanche characteristics I = f(t AS parameter: T 100 10 25 °C 1 0.8 1 1.2 1.4 [V] page 6 IPB80P03P4-05 IPI80P03P4-05, IPP80P03P4- MHz [ j(start) 100 °C 150 ° 100 t [µs] AV Ciss Coss Crss °C 1000 2008-09-30 ...

Page 7

... A 200 [° Typ. gate charge -80 A pulsed GS gate D parameter gate Rev. 1.0 14 Drain-source breakdown voltage V BR(DSS 125 175 16 Gate charge waveforms -6V -24V 60 80 100 [nC] page 7 IPB80P03P4-05 IPI80P03P4-05, IPP80P03P4- -60 - 100 T [° 140 180 gate gate 2008-09-30 ...

Page 8

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 IPI80P03P4-05, IPP80P03P4-05 page 8 IPB80P03P4-05 2008-09-30 ...

Page 9

... Revision History Version Rev. 1.0 Date page 9 IPB80P03P4-05 IPI80P03P4-05, IPP80P03P4-05 Changes 2008-09-30 ...

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