IPB80P03P4-05 Infineon Technologies, IPB80P03P4-05 Datasheet - Page 6

• Manufacturer Part Number: IPB80P03P4-05
• Description: MOSFET P-CH 30V 80A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB80P03P4-05

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.7 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 253µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 10300pF @ 25V
• Power - Max: 137W
• Mounting Type: Surface Mount
• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.0
9 Typ. gate threshold voltage
V
parameter: -I
11 Typical forward diode characteristicis
IF = f(V
parameter: T
GS(th)
10
10
10
10
3.5
2.5
1.5
= f(T
4
3
2
3
2
1
0
SD
-60
0
)
j
); V
D
j
0.2
-20
GS
= V
0.4
20
DS
175 °C
253µA
0.6
-V
T
j
SD
60
[°C]
25 °C
[V]
0.8
2530µA
100
1
140
1.2
180
1.4
page 6
10 Typ. capacitances
C = f(V
12 Avalanche characteristics
I
parameter: T
AS
= f(t
100
10
10
10
10
10
10
1
DS
5
4
3
2
1
AV
1
0
); V
)
j(start)
GS
= 0 V; f = 1 MHz
5
IPI80P03P4-05, IPP80P03P4-05
10
10
t
-V
AV
150 °C
DS
15
[µs]
[V]
IPB80P03P4-05
100
100 °C
20
25 °C
25
2008-09-30
Coss
Crss
Ciss
1000
30