SPD30P06P G Infineon Technologies, SPD30P06P G Datasheet - Page 3

• Manufacturer Part Number: SPD30P06P G
• Description: MOSFET P-CH 60V 30A TO252-3
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPD30P06P G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 75 mOhm @ 21.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4V @ 1.7mA
• Gate Charge (qg) @ Vgs: 48nC @ 10V
• Input Capacitance (ciss) @ Vds: 1535pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (5 leads + tab)
• Package: DPAK (TO-252)
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 75.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
V
Input capacitance
V
Output capacitance
V
Reverse transfer capacitance
V
Turn-on delay time
V
R
Rise time
V
R
Turn-off delay time
V
R
Fall time
V
R
Rev 2.3
DS
GS
GS
GS
DD
DD
DD
DD
G
G
G
G
= 1.6
= 1.6
= 1.6
= 1.6
³
= 0 V, V
= 0 V, V
= 0 V, V
= -30 V, V
= -30 V, V
= -30 V, V
= -30 V, V
2* I
D
* R
W
W
W
W
DS(on)max
DS
DS
DS
GS
GS
GS
GS
= -25 V, f = 1 MHz
= -25 V, f = 1 MHz
= -25 V, f = 1 MHz
= -10 V, I
= -10 V, I
= -10 V, I
= -10 V, I
, I
D
= -21.5 A
D
D
D
D
= -21.5 A,
= -21.5 A,
= -21.5 A,
= -21.5 A,
j
= 25 °C, unless otherwise specified
Page 3
Symbol
g
C
C
C
t
t
t
t
d(on)
r
d(off)
f
fs
iss
oss
rss
min.
5.2
-
-
-
-
-
-
-
Values
1228
typ.
10.4
387
142
13
11
30
20
SPD30P06P G
max.
1535
19.5
16.5
383
177
45
30
2008-09-02
-
Unit
S
pF
ns