SPD30P06P G Infineon Technologies, SPD30P06P G Datasheet - Page 9

• Manufacturer Part Number: SPD30P06P G
• Description: MOSFET P-CH 60V 30A TO252-3
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPD30P06P G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 75 mOhm @ 21.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4V @ 1.7mA
• Gate Charge (qg) @ Vgs: 48nC @ 10V
• Input Capacitance (ciss) @ Vds: 1535pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (5 leads + tab)
• Package: DPAK (TO-252)
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 75.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SPD30P06P G
Package outline: PG-TO252-3
Rev 2.3
page 9
2008-09-02