BUZ73L Infineon Technologies, BUZ73L Datasheet - Page 8

• Manufacturer Part Number: BUZ73L
• Description: MOSFET N-CH 200V 7A TO-220AB
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BUZ73L

• Package / Case: TO-220AB
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 3.5A, 5V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 840pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.4 Ohm @ 5 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A
• Power Dissipation: 40000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BUZ73L; BUZ73LIN; BUZ73LX; BUZ73LXK; SP000011374

Rev. 2.3
Avalanche energy E
parameter: I
R
Drain-source breakdown voltage
V
V
Rev. 2.2
(BR)DSS
E
(BR)DSS
GS
AS
= 25 Ω , L = 3.67 mH
240
230
225
220
215
210
205
190
185
180
130
110
100
200
195
mJ
90
80
70
60
50
40
30
20
10
V
0
-60
20
= ƒ ( T
D
40
= 7 A, V
-20
j
)
60
20
AS
DD
80
= ƒ ( T
= 50 V
60
100
j
)
120
100
T
˚C
T
˚C
j
j
Page 8
160
160
Page 8
Typ. gate charge
V
parameter: I
V
GS
GS
= ƒ ( Q
16
12
10
V
8
6
4
2
0
0
Gate
10
D puls
)
20
= 63 A
0,2
30
V
DS max
40
50
60
70
0,8
2007-01-16
BUZ 73L
V
2009-03-31
80
DS max
Q
Gate
nC 100