IPP12CN10L G Infineon Technologies, IPP12CN10L G Datasheet - Page 2

• Manufacturer Part Number: IPP12CN10L G
• Description: MOSFET N-CH 100V 69A TO220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP12CN10L G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 69A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 69A
• Vgs(th) (max) @ Id: 2.4V @ 83µA
• Gate Charge (qg) @ Vgs: 58nC @ 10V
• Input Capacitance (ciss) @ Vds: 5600pF @ 50V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 9.9mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.012 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 69 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000308792

Rev. 1.02
4)
connection. PCB is vertical in still air.
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
I
I
R
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJC
thJA
DS(on)
G
minimal footprint
6 cm2 cooling area
V
V
V
T
V
T
V
V
(TO220)
V
(TO220)
V
(TO251)
V
(TO251)
|V
I
D
page 2
j
j
GS
DS
DS
DS
GS
GS
GS
GS
GS
=25 °C
=125 °C
=69 A
DS
=V
=80 V, V
=80 V, V
=0 V, I
=20 V, V
=4.5 V, I
=10 V, I
=4.5 V, I
=10 V, I
|>2|I
GS
, I
D
2
|R
D
(one layer, 70 µm thick) copper area for drain
D
=1 mA
D
D
=83 µA
D
D
GS
GS
DS
DS(on)max
=69 A,
=69 A,
=34.5 A,
=34.5 A,
=0 V,
=0 V,
=0 V
4)
,
min.
100
1.2
57
-
-
-
-
-
-
-
-
-
-
-
Values
1.84
11.7
11.7
typ.
113
0.1
9.9
9.9
1.3
10
1
-
-
-
-
IPS12CN10L G
IPP12CN10L G
max.
15.8
15.8
11.8
100
100
1.2
2.4
62
40
12
1
-
-
-
Unit
K/W
V
µA
nA
mΩ
Ω
S
2008-07-15