IPP12CN10L G Infineon Technologies, IPP12CN10L G Datasheet - Page 6

• Manufacturer Part Number: IPP12CN10L G
• Description: MOSFET N-CH 100V 69A TO220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP12CN10L G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 69A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 69A
• Vgs(th) (max) @ Id: 2.4V @ 83µA
• Gate Charge (qg) @ Vgs: 58nC @ 10V
• Input Capacitance (ciss) @ Vds: 5600pF @ 50V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 9.9mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.012 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 69 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000308792

Rev. 1.02
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
30
25
20
15
10
DS
=f(T
5
0
4
3
2
1
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=69 A; V
20
20
Crss
Coss
GS
98 %
Ciss
V
=10 V
T
DS
j
60
40
[°C]
[V]
typ
100
60
140
180
page 6
80
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
2.5
1.5
0.5
10
10
10
10
=f(T
SD
2
1
0
3
2
1
0
-60
)
0
j
); V
D
j
175 °C, 98%
GS
-20
175 °C
=V
0.5
DS
20
83 µA
V
T
SD
j
60
[°C]
1
25 °C
[V]
830 µA
25 °C, 98%
100
IPS12CN10L G
IPP12CN10L G
1.5
140
2008-07-15
180
2