IPP100P03P3L-04 Infineon Technologies, IPP100P03P3L-04 Datasheet - Page 2
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IPP100P03P3L-04
Manufacturer Part Number
IPP100P03P3L-04
Description
MOSFET P-CH 30V 100A TO220-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPP100P03P3L-04.pdf
(9 pages)
Specifications of IPP100P03P3L-04
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.3 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
2.1V @ 475µA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
9300pF @ 25V
Power - Max
200W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000311114
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPP100P03P3L-04
Manufacturer:
FSC
Quantity:
6 000
Rev. 1.1
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
2)
j
=25 °C, unless otherwise specified
Symbol
R
R
R
V
V
I
I
R
DSS
GSS
(BR)DSS
GS(th)
thJC
thJA
thJA
DS(on)
minimal footprint
6 cm
V
V
I
V
T
V
T
V
V
V
SMD version
V
V
SMD version
D
j
j
GS
DS
DS
DS
GS
GS
GS
GS
GS
=-475µA
=25°C
=125°C
page 2
=V
=-30V, V
=-30V, V
=0V, I
=-16V, V
=-4.5V, I
=-4.5V, I
=-10V, I
=-10V, I
2
Conditions
cooling area
GS
,
2)
D
=-250µA
D
D
D
D
GS
GS
DS
=-80A
=-80A,
=-50A
=-50A,
=0V,
=0V,
=0V
IPI100P03P3L-04, IPP100P03P3L-04
3)
min.
-30
-1
-
-
-
-
-
-
-
-
-
-
-
Values
typ.
-1.5
-0.1
-10
-10
4.8
4.5
3.3
3.0
-
-
-
-
-
IPB100P03P3L-04
max.
-100
-100
0.65
-2.1
7.6
7.3
4.3
62
62
40
-1
4
-
2007-09-25
Unit
K/W
V
µA
nA
m