IPP100P03P3L-04 Infineon Technologies, IPP100P03P3L-04 Datasheet - Page 7
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IPP100P03P3L-04
Manufacturer Part Number
IPP100P03P3L-04
Description
MOSFET P-CH 30V 100A TO220-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPP100P03P3L-04.pdf
(9 pages)
Specifications of IPP100P03P3L-04
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.3 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
2.1V @ 475µA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
9300pF @ 25V
Power - Max
200W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000311114
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPP100P03P3L-04
Manufacturer:
FSC
Quantity:
6 000
Rev. 1.1
13 Typical avalanche energy
E
parameter: I
15 Typ. gate charge
V
parameter: V
AS
GS
2000
1800
1600
1400
1200
1000
= f(T
= f(Q
800
600
400
200
12
10
8
6
4
2
0
0
25
0
j
)
gate
20 A
80 A
40 A
D
); I
DD
D
= 80 A pulsed
50
75
Q
T
gate
100
125
j
[°C]
[nC]
8 V
150
175
32 V
200
225
page 7
14 Drain-source breakdown voltage
V
16 Gate charge waveforms
BR(DSS)
V
V
37
35
33
31
29
27
25
GS
GS
-60
= f(T
Q
Q
IPI100P03P3L-04, IPP100P03P3L-04
gs
gs
j
); I
-20
D
= 1 mA
Q
Q
20
g
g
T
Q
Q
j
60
gd
gd
[°C]
IPB100P03P3L-04
100
Q
Q
gate
gate
140
2007-09-25
180