SPB80N03S2-03 G Infineon Technologies, SPB80N03S2-03 G Datasheet - Page 5

• Manufacturer Part Number: SPB80N03S2-03 G
• Description: MOSFET N-CH 30V 80A D2PAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPB80N03S2-03 G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.1 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 7020pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0034 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000200139; SPB80N03S203GXT

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
= f (V
190
160
140
120
100
320
240
200
160
120
A
A
80
60
40
20
80
40
0
0
0
0
DS
SPP80N03S2-03
GS
P
0.5
tot
i
); T
); V
= 300W
1
p
p
h
= 80 µs
= 80 µs
1
j
=25°C
DS
1.5
2
≥ 2 x I
2
3
D
2.5
x R
4
3
DS(on)max
3.5
5
g
e
c
a
d
f
b
V GS [V]
4
a
b
c
d
e
f
g
h
i
V
V
V
V
DS
GS
10.0
4.0
4.2
4.4
4.6
4.8
5.0
5.2
5.4
7
5
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: g
fs
DS(on)
m Ω
= f(I
180
140
120
100
S
12
10
80
60
40
20
9
8
7
6
5
4
3
2
1
0
0
0
0
D
SPP80N03S2-03
SPP80N03S2-03,SPB80N03S2-03
= f (I
V
); T
GS
4.4
c
c
[V] =
20
j
4.6
d
=25°C
40
D
fs
GS
)
4.8
e
40
d
5.0
f
80
60
g
5.2
e
120
5.4
h
80
10.0
i
SPI80N03S2-03
100
160
f
2003-05-09
120
A
g
I
A
D
I
h
i
D
150
240