SPB80N03S2-03 G Infineon Technologies, SPB80N03S2-03 G Datasheet - Page 6

MOSFET N-CH 30V 80A D2PAK

SPB80N03S2-03 G

Manufacturer Part Number
SPB80N03S2-03 G
Description
MOSFET N-CH 30V 80A D2PAK
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of SPB80N03S2-03 G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.1 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
150nC @ 10V
Input Capacitance (ciss) @ Vds
7020pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0034 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000200139
SPB80N03S203GXT
9 Drain-source on-state resistance
R
parameter : I
11 Typ. capacitances
C = f (V
parameter: V
DS(on)
mΩ
pF
10
10
10
10
8.5
7
6
5
4
3
2
1
0
-60
5
4
3
2
0
SPP80N03S2-03
= f (T
DS
)
-20
D
j
5
GS
)
= 80 A, V
=0V, f=1 MHz
20
10
98%
60
typ
GS
15
= 10 V
100
20
C
C
C
oss
140 °C
iss
rss
V
T
V
j
DS
200
30
Page 6
10 Typ. gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j , t
F
GS(th)
= f (V
10
10
10
10
2.5
1.5
0.5
V
A
4
3
2
1
0
-60
3
2
1
0
0
= f (T j )
SD
SPP80N03S2-03
SPP80N03S2-03,SPB80N03S2-03
)
0.4
-20
GS
0.8
p
= V
= 80 µs
250 µA
20
DS
1.2
T
T
T
T
j
j
j
j
= 25 °C typ
= 175 °C typ
= 25 °C (98%)
= 175 °C (98%)
60
1.6
1.25 mA
SPI80N03S2-03
100
2
2003-05-09
2.4
°C
V
V
T
j
SD
180
3

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