IPW90R1K0C3 Infineon Technologies, IPW90R1K0C3 Datasheet - Page 6

• Manufacturer Part Number: IPW90R1K0C3
• Description: MOSFET N-CH 900V 5.7A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPW90R1K0C3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 5.7A
• Vgs(th) (max) @ Id: 3.5V @ 370µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 850pF @ 100V
• Power - Max: 89W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.7A
• Drain Source Voltage Vds: 900V
• On Resistance Rds(on): 1ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 1 Ohms
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.7 A
• Power Dissipation: 89 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000413752

Please note the new package dimensions arccording to PCN 2009-134-A
Rev. 1.0
9 Typ. gate charge
V
parameter: V
11 Avalanche energy
E
GS
AS
=f(T
=f(Q
100
80
60
40
20
10
0
8
6
4
2
0
25
j
); I
gate
0
D
); I
=1.1 A; V
DD
D
=3.3 A pulsed
50
10
DD
=50 V
75
Q
T
400 V
gate
J
20
[°C]
[nC]
100
720 V
30
125
150
page 6
40
10 Forward characteristics of reverse diode
I
parameter: T
12 Drain-source breakdown voltage
V
F
=f(V
BR(DSS)
1050
1000
10
950
900
850
800
10
10
10
SD
-1
2
1
0
=f(T
-60
)
0
j
); I
J
-20
D
=0.25 mA
0.5
150 °C
20
25 °C
V
T
SD
J
60
1
[°C]
[V]
100
IPW90R1K0C3
25 °C, 98%
1.5
150 °C, 98%
140
2008-07-29
180
2