BUZ30A Infineon Technologies, BUZ30A Datasheet

BUZ30A

Manufacturer Part Number

BUZ30A

Description

MOSFET N-CH 200V 21A TO-220AB

Manufacturer

Infineon Technologies

Series

SIPMOS®r

Datasheet

1.BUZ30A.pdf (10 pages)

Specifications of BUZ30A

Package / Case

TO-220AB

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

130 mOhm @ 13.5A, 10V

Drain To Source Voltage (vdss)

200V

Current - Continuous Drain (id) @ 25° C

21A

Vgs(th) (max) @ Id

4V @ 1mA

Input Capacitance (ciss) @ Vds

1900pF @ 25V

Power - Max

125W

Mounting Type

Through Hole

Minimum Operating Temperature

- 55 C

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.13 Ohm @ 10 V

Drain-source Breakdown Voltage

200 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

21 A

Power Dissipation

125000 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gate Charge (qg) @ Vgs

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

BUZ30AIN
BUZ30AX
BUZ30AXK
BUZ30AXTIN
BUZ30AXTIN
SP000011336

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Current page: 1 of 10
Download datasheet (3Mb)

SIPMOS

Rev. 2.3

• N channel

• Enhancement mode

• Avalanche-rated

Type

BUZ 30A

Maximum Ratings

Parameter

Continuous drain current

Pulsed drain current

Avalanche current,limited by T

Avalanche energy,periodic limited by T

Avalanche energy, single pulse

L = 1.53 mH, T

Gate source voltage

Power dissipation

Operating temperature

Storage temperature

Thermal resistance, chip case

Thermal resistance, chip to ambient

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

= 21 A, V

= 26 ˚C

= 25 ˚C

Power Transistor

= 50 V, R

= 25 ˚C

200 V

= 25

jmax

21 A

Ω

jmax

0.13

DS(on

Ω

)

Page 1

Symbol

Dpuls

stg

tot

thJA

thJC

Package

PG-TO-220-3

Pin 1

55 / 150 / 56

-55 ... + 150

Values

≤

450

125

Pb-free

Yes

Pin 2

BUZ 30A

2009-04-07

˚C

K/W

Unit

Pin 3

Related parts for BUZ30A

BUZ30A Summary of contents

Page 1

SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type V DS BUZ 30A 200 V Maximum Ratings Parameter Continuous drain current ˚C C Pulsed drain current ˚C C Avalanche current,limited ...

Page 2

Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage 0.25 mA ˚ Gate threshold voltage DS, D Zero ...

Page 3

Electrical Characteristics Parameter Dynamic Characteristics Transconductance ≥ 13 DS(on)max, D Input capacitance MHz GS DS Output ...

Page 4

Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current ˚C C Inverse diode direct current,pulsed ˚C C Inverse diode forward voltage ...