BUZ30A Infineon Technologies, BUZ30A Datasheet - Page 2

• Manufacturer Part Number: BUZ30A
• Description: MOSFET N-CH 200V 21A TO-220AB
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BUZ30A

• Package / Case: TO-220AB
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 13.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 1900pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.13 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 21 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BUZ30AIN; BUZ30AX; BUZ30AXK; BUZ30AXTIN; BUZ30AXTIN; SP000011336

Electrical Characteristics, at T
Rev. 2.3
Parameter
Static Characteristics
Drain- source breakdown voltage
V
Gate threshold voltage
V
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-Source on-resistance
V
GS
GS =
DS
DS
GS
GS
= 200 V, V
= 200 V, V
= 0 V, I
= 20 V, V
= 10 V, I
V
DS,
I
D
D
D
= 1 mA
= 0.25 mA, T
DS
= 13.5 A
GS
GS
= 0 V
= 0 V, T
= 0 V, T
j
j
j
= 25 ˚C
= 125 ˚C
= 25 ˚C
j
= 25˚C, unless otherwise specified
V
V
I
I
R
Symbol
DSS
GSS
Page 2
GS(th)
(BR)DSS
DS(on)
-
min.
-
-
-
200
2.1
Values
typ.
-
10
0.1
0.1
10
3
max.
-
4
1
100
100
0.13
BUZ 30A
2009-04-07
µA
nA
Ω
Unit
V