BTS282Z E3180A Infineon Technologies, BTS282Z E3180A Datasheet - Page 11

MOSFET N-CH 49V 80A TO-220-7

BTS282Z E3180A

Manufacturer Part Number
BTS282Z E3180A
Description
MOSFET N-CH 49V 80A TO-220-7
Manufacturer
Infineon Technologies
Series
TEMPFET®r
Datasheet

Specifications of BTS282Z E3180A

Package / Case
TO-220-7 (Bent and Staggered Leads)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.5 mOhm @ 36A, 10V
Drain To Source Voltage (vdss)
49V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2V @ 240µA
Gate Charge (qg) @ Vgs
232nC @ 10V
Input Capacitance (ciss) @ Vds
4800pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Minimum Operating Temperature
- 40 C
Configuration
Single Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0065 Ohm @ 10 V
Drain-source Breakdown Voltage
49 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BTS282Z-E3180A
BTS282ZE3180AINTR
BTS282ZE3180ANT
BTS282ZE3180AT
BTS282ZE3180AT
BTS282ZE3180ATINTR
BTS282ZE3180ATINTR
SP000012360
1
Figure 1
Figure 2
Data Sheet
Package Outlines
PG-TO220-7-3 (Please Insert Package Long Name!)
PG-TO220-7-180
C
1)
1) Shear and punch direction no burrs this surface
0.6
Shear and punch direction no burrs this surface.
Back side, heatsink contour
All metal surfaces tin plated, except area of cut.
1.27
Back side, heatsink contour
All metal surfaces tin plated, except area of cut
0...0.15
+0.1
-0.03
6 x 1.27 = 7.62
6x 1.27
9.9
9.5
9.9
7.5
6.6
8
7.5
6.6
±0.2
±0.2
0 ... 0.15
0.6
7x
A
±0.1
A
0.25
0.25 M
11
M
A
B
A B
0.5
1.3
C
0.05
1)
B
+0.15
+0.1
-0.02
0.1
1.3
0.05
2.4
1)
4.5
B
+0.1
-0.02
2.4
±0.3
4.4
4.4
0.1 B
8.4
±0.3
0.5
±0.1
Speed TEMPFET
Rev.1.2, 2009-07-31
Package Outlines
BTS 282 Z

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