BTS282Z E3180A Infineon Technologies, BTS282Z E3180A Datasheet - Page 7

• Manufacturer Part Number: BTS282Z E3180A
• Description: MOSFET N-CH 49V 80A TO-220-7
• Manufacturer: Infineon Technologies
• Series: TEMPFET®r

Specifications of BTS282Z E3180A

• Package / Case: TO-220-7 (Bent and Staggered Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 36A, 10V
• Drain To Source Voltage (vdss): 49V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 240µA
• Gate Charge (qg) @ Vgs: 232nC @ 10V
• Input Capacitance (ciss) @ Vds: 4800pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 40 C
• Configuration: Single Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0065 Ohm @ 10 V
• Drain-source Breakdown Voltage: 49 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BTS282Z-E3180A; BTS282ZE3180AINTR; BTS282ZE3180ANT; BTS282ZE3180AT; BTS282ZE3180AT; BTS282ZE3180ATINTR; BTS282ZE3180ATINTR; SP000012360

Data Sheet
' W 7
7
W
7
=
I W
9
'
W 7
Speed TEMPFET
Rev.1.2, 2009-07-31
BTS 282 Z
7
W