IPA50R140CP Infineon Technologies, IPA50R140CP Datasheet

MOSFET N-CH 550V 23A TO220-3

IPA50R140CP

Manufacturer Part Number
IPA50R140CP
Description
MOSFET N-CH 550V 23A TO220-3
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheets

Specifications of IPA50R140CP

Package / Case
TO-220FP
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
140 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
550V
Current - Continuous Drain (id) @ 25° C
23A
Vgs(th) (max) @ Id
3.5V @ 930µA
Gate Charge (qg) @ Vgs
64nC @ 10V
Input Capacitance (ciss) @ Vds
2540pF @ 100V
Power - Max
34W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.14 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
23 A
Power Dissipation
34000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
23A
Drain Source Voltage Vds
550V
On Resistance Rds(on)
140mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000234988

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPA50R140CP
Manufacturer:
IXYS
Quantity:
6 000
Part Number:
IPA50R140CP
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 2.0
Features
• Worldwide best R
• Lowest figure of merit R
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Pb-free lead plating; RoHS compliant
• Quailfied according to JEDEC
CoolMOS CP is designed for:
• Hard and softswitching SMPS for server power supplies
• CCM PFC for ATX, Notebook adapter, PDP and LCD TV
• PWM stages for Server, Adapter
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive t
Avalanche current, repetitive t
MOSFET dv /dt ruggedness
Gate source voltage
Power dissipation
Operating and storage temperature
Mounting torque
CoolMOS
Type
IPA50R140CP
TM
Power Transistor
DS(on)
2)
j
Package
PG-TO220FP
=25 °C, unless otherwise specified
in TO220
1)
ON
x Q
AR
AR
0)
g
2),3)
2),3)
for target applications
Symbol Conditions
I
I
E
E
I
dv /dt
V
P
T
D
D,pulse
AR
j
AS
AR
GS
tot
, T
Marking
5R140P
stg
T
T
T
I
I
V
static
AC (f>1 Hz)
T
M2.5 screws
D
D
page 1
C
C
C
C
DS
=9.3 A, V
=9.3 A, V
=25 °C
=100 °C
=25 °C
=25 °C
=0...400 V
DD
DD
Product Summary
V
R
Q
=50 V
=50 V
DS
DS(on),max
g,typ
@T
jmax
-55 ... 150
TO- 220 FP
Value
0.93
616
±20
±30
9.3
23
15
56
50
34
50
IPA50R140CP
0.140 Ω
550
48
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
V
nC
2008-04-18

Related parts for IPA50R140CP

IPA50R140CP Summary of contents

Page 1

... =100 ° =25 °C D,pulse =9 = 2 2), =0...400 static GS AC (f>1 Hz =25 °C tot stg M2.5 screws page 1 IPA50R140CP @T 550 DS jmax 0.140 Ω DS(on),max 48 g,typ TO- 220 FP Value 616 0.93 9.3 50 ±20 ±30 34 -55 ... 150 Unit V/ °C Ncm 2008-04-18 ...

Page 2

... GS(th =500 DSS T =25 ° =500 =150 ° = GSS = = DS(on) T =25 ° = = =150 ° MHz, open drain G page 2 IPA50R140CP Value Unit V/ns Values Unit min. typ. max 3.65 K 260 °C 500 - - V 2 µ 100 nA Ω - 0.13 0.14 - 0.32 - Ω - 2.2 ...

Page 3

... =400 plateau = =25 ° =400 /dt =100 A/µ rrm < <T , identical low and high side switch peak (BR)DSS j jmax while V oss while V oss while V oss page 3 IPA50R140CP Values Unit min. typ. max. - 2540 - pF - 110 - - 110 - - 230 - - 8 5 0.9 1 400 - ns - 5.6 - µ ...

Page 4

... Max. transient thermal impedance Z =f(t ); (thJC) p parameter 0.2 0.1 0. 0.02 0.01 single pulse - Rev. 2.0 2 Safe operating area I =f parameter 100 150 [° Typ. output characteristics I =f parameter [s] p page 4 IPA50R140CP ); T =25 ° µs 10 µs limited by on-state resistance 100 µ [ =25 ° 2008-04-18 ...

Page 5

... T Rev. 2.0 6 Typ. drain-source on-state resistance R =f(I DS(on) parameter 0.6 0.5 5 4.5 V 0 Typ. transfer characteristics I =f parameter typ 120 150 180 0 [°C] j page 5 IPA50R140CP ); T =150 ° |>2 DS(on)max j 25 °C 150 ° [ 2008-04-18 ...

Page 6

... Forward characteristics of reverse diode I =f parameter 100 400 [nC] 12 Drain-source breakdown voltage V =f(T BR(DSS) 580 560 540 520 500 480 460 440 -60 125 175 [°C] j page 6 IPA50R140CP j 25 °C, 98% 150 °C, 98% 150 °C 25 °C 0.5 1 1 =0. - 100 140 T [° 180 2008-04-18 ...

Page 7

... Typ. capacitances C =f MHz Ciss 3 10 Coss Crss 100 200 V Rev. 2.0 14 Typ. Coss stored energy E = f(V oss 300 400 500 0 [V] DS page 7 IPA50R140CP ) 100 200 300 400 V [V] DS 500 2008-04-18 ...

Page 8

... Definition of diode switching characteristics Rev. 2.0 page 8 IPA50R140CP 2008-04-18 ...

Page 9

... PG-TO220-3-31: Outline / Fully isolated package (2500VAC; 1minute) Rev. 2.0 page 9 IPA50R140CP 2008-04-18 ...

Page 10

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 10 IPA50R140CP 2008-04-18 ...

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