IPA50R140CP Infineon Technologies, IPA50R140CP Datasheet - Page 2

• Manufacturer Part Number: IPA50R140CP
• Description: MOSFET N-CH 550V 23A TO220-3
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPA50R140CP

• Package / Case: TO-220FP
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 140 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 550V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 3.5V @ 930µA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 2540pF @ 100V
• Power - Max: 34W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.14 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 23 A
• Power Dissipation: 34000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 23A
• Drain Source Voltage Vds: 550V
• On Resistance Rds(on): 140mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000234988

Rev. 2.0
Maximum ratings, at T
Parameter
Continuous diode forward current
Diode pulse current
Reverse diode dv /dt
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
Soldering temperature,
wavesoldering only allowed at leads
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
2)
4)
j
=25 °C, unless otherwise specified
j
=25 °C, unless otherwise specified
1)
Symbol Conditions
Symbol Conditions
I
I
dv /dt
R
R
T
V
V
I
I
R
R
S
S,pulse
DSS
GSS
sold
(BR)DSS
GS(th)
thJC
thJA
DS(on)
G
T
leaded
1.6 mm (0.063 in.)
from case for 10 s
V
V
V
T
V
T
V
V
T
V
T
f =1 MHz, open drain
page 2
C
j
j
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=150 °C
=25 °C
=150 °C
=25 °C
=V
=500 V, V
=500 V, V
=0 V, I
=20 V, V
=10 V, I
=10 V, I
GS
, I
D
D
=250 µA
D
D
=0.93 mA
DS
=14 A,
=14 A,
GS
GS
=0 V
=0 V,
=0 V,
min.
500
2.5
-
-
-
-
-
-
-
-
-
Values
Value
0.13
0.32
typ.
2.2
14
56
15
20
3
-
-
-
-
-
-
IPA50R140CP
max.
3.65
0.14
260
100
3.5
62
2
-
-
-
-
Unit
A
V/ns
Unit
K/W
°C
V
µA
nA
Ω
Ω
2008-04-18