IPA50R140CP Infineon Technologies, IPA50R140CP Datasheet - Page 6

• Manufacturer Part Number: IPA50R140CP
• Description: MOSFET N-CH 550V 23A TO220-3
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPA50R140CP

• Package / Case: TO-220FP
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 140 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 550V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 3.5V @ 930µA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 2540pF @ 100V
• Power - Max: 34W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.14 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 23 A
• Power Dissipation: 34000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 23A
• Drain Source Voltage Vds: 550V
• On Resistance Rds(on): 140mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000234988

9 Typ. gate charge
V
11 Avalanche energy
E
700
600
500
400
300
200
100
0
10
T
Q
25
8
6
4
2
0
0
I
V
I
10
V
75
20
Q
T
gate
j
[°C]
[nC]
30
125
40
175
50
10 Forward characteristics of reverse diode
I
12 Drain-source breakdown voltage
V
V
10
580
560
540
520
500
480
460
440
10
10
10
-1
2
1
0
-60
0
T
T
I
-20
0.5
20
V
T
SD
j
60
[°C]
1
[V]
100
IPA50R140CP
1.5
140
180
2