IPB038N12N3 G Infineon Technologies, IPB038N12N3 G Datasheet - Page 4

• Manufacturer Part Number: IPB038N12N3 G
• Description: MOSFET N-CH 120V 120A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB038N12N3 G

• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.8 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 120V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 270µA
• Gate Charge (qg) @ Vgs: 211nC @ 10V
• Input Capacitance (ciss) @ Vds: 13800pF @ 60V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Gate Charge Qg: 158 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.8 mOhms
• Forward Transconductance Gfs (max / Min): 165 S, 83 S
• Drain-source Breakdown Voltage: 120 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IPB038N12N3 G; IPB038N12N3 GTR

Rev. 2.2
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
350
300
250
200
150
100
10
10
10
10
50
DS
0
3
2
1
0
C
10
0
); T
)
-1
C
p
limited by on-state
resistance
=25 °C; D =0
50
10
0
DC
10 ms
T
V
C
DS
100
10
[°C]
1 ms
1
[V]
100 µs
10 µs
150
10
2
1 µs
200
10
page 4
3
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
140
120
100
=f(t
10
10
10
10
80
60
40
20
C
0
-1
-2
-3
0
); V
10
p
0
0.01
)
0.02
-5
0.05
0.2
0.5
0.1
GS
IPP041N12N3 G
single pulse
≥10 V
p
10
/T
-4
50
10
-3
T
t
C
100
p
[°C]
[s]
10
-2
IPB038N12N3 G
IPI041N12N3 G
150
10
-1
2009-07-16
200
10
0