IPB038N12N3 G Infineon Technologies, IPB038N12N3 G Datasheet - Page 7

• Manufacturer Part Number: IPB038N12N3 G
• Description: MOSFET N-CH 120V 120A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB038N12N3 G

• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.8 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 120V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 270µA
• Gate Charge (qg) @ Vgs: 211nC @ 10V
• Input Capacitance (ciss) @ Vds: 13800pF @ 60V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Gate Charge Qg: 158 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.8 mOhms
• Forward Transconductance Gfs (max / Min): 165 S, 83 S
• Drain-source Breakdown Voltage: 120 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IPB038N12N3 G; IPB038N12N3 GTR

Rev. 2.2
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
1000
100
140
135
130
125
120
115
110
105
100
10
AV
1
-60
=f(T
); R
1
j
GS
); I
j(start)
=25
-20
D
=1 mA
10
20
t
T
AV
j
60
[°C]
[µs]
150 °C
100
100
100 °C
25 °C
140
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
IPP041N12N3 G
DD
Q
D
=100 A pulsed
g s
50
Q
Q
gate
g
100
Q
24 V
[nC]
sw
Q
g d
IPB038N12N3 G
60 V
IPI041N12N3 G
150
96 V
Q
g ate
2009-07-16
200