IPB072N15N3 G Infineon Technologies, IPB072N15N3 G Datasheet
IPB072N15N3 G
Specifications of IPB072N15N3 G
Related parts for IPB072N15N3 G
IPB072N15N3 G Summary of contents
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... Power-Transistor Features R R Type Package Marking Maximum ratings, T Parameter v t IPB072N15N3 G Product Summary Symbol Conditions IPP075N15N3 G IPI075N15N3 G Value Unit ...
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... Parameter Thermal characteristics Electrical characteristics, T Static characteristics IPB072N15N3 G Symbol Conditions IPP075N15N3 G IPI075N15N3 G Values Unit min. typ. max. ...
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... Parameter Dynamic characteristics Reverse Diode IPB072N15N3 G Symbol Conditions IPP075N15N3 G IPI075N15N3 G Values Unit min. typ. max. ...
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... Power dissipation P T 320 280 240 200 160 120 100 T [° Safe operating area [V] DS IPB072N15N3 G 2 Drain current 120 100 150 200 0 4 Max. transient thermal impedance IPP075N15N3 G IPI075N15N3 G 50 100 150 200 T [° [ ...
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... Typ. output characteristics 350 300 250 200 150 100 [ Typ. transfer characteristics 200 150 100 [ Typ. drain-source on resistance Typ. forward transconductance 160 140 120 100 IPB072N15N3 G IPP075N15N3 G IPI075N15N3 100 I [ 120 I [A] D 150 160 ...
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... Drain-source on-state resistance -60 - [° Typ. capacitances [ Typ. gate threshold voltage 3.5 3 2.5 2 1.5 1 0.5 0 100 140 180 -60 12 Forward characteristics of reverse diode 100 IPB072N15N3 G IPP075N15N3 G IPI075N15N3 - 100 140 T [°C] j 0.5 1 1.5 V [V] SD 180 2 ...
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... Avalanche characteristics 1000 100 [µ Drain-source breakdown voltage 170 165 160 155 150 145 140 135 -60 - [°C] j IPB072N15N3 G 14 Typ. gate charge 100 1000 0 16 Gate charge waveforms 100 140 180 IPP075N15N3 G IPI075N15N3 [nC] gate ate ...
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... PG-TO220-3: Outline IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G ...
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... PG-TO263-3: Outline IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G ...
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... PG-TO262-3: Outline IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G ...
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... IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G ...