IPB072N15N3 G Infineon Technologies, IPB072N15N3 G Datasheet - Page 7
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IPB072N15N3 G
Manufacturer Part Number
IPB072N15N3 G
Description
MOSFET N-CH 150V 100A TO263-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPB072N15N3_G.pdf
(11 pages)
Specifications of IPB072N15N3 G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.2 mOhm @ 100A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
4V @ 270µA
Gate Charge (qg) @ Vgs
93nC @ 10V
Input Capacitance (ciss) @ Vds
5470pF @ 75V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Drain Source Voltage Vds
150V
On Resistance Rds(on)
5.8mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +175°C
Configuration
Single
Resistance Drain-source Rds (on)
0.0072 Ohms
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000386664
13 Avalanche characteristics
I
15 Drain-source breakdown voltage
V
1000
170
165
160
155
150
145
140
135
t
100
10
1
-60
1
R
T
T
I
-20
20
10
T
t
AV
j
60
[°C]
[µs]
100
100
140
1000
180
14 Typ. gate charge
V
16 Gate charge waveforms
Q
V
10
V
Q
8
6
4
2
0
0
V
I
IPB072N15N3 G
Q
20
Q
Q
gate
g
Q
40
[nC]
Q
IPP075N15N3 G
IPI075N15N3 G
60
Q
g ate
80