IPB072N15N3 G Infineon Technologies, IPB072N15N3 G Datasheet - Page 7

• Manufacturer Part Number: IPB072N15N3 G
• Description: MOSFET N-CH 150V 100A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB072N15N3 G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.2 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 270µA
• Gate Charge (qg) @ Vgs: 93nC @ 10V
• Input Capacitance (ciss) @ Vds: 5470pF @ 75V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 150V
• On Resistance Rds(on): 5.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0072 Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000386664

13 Avalanche characteristics
I
15 Drain-source breakdown voltage
V
1000
170
165
160
155
150
145
140
135
t
100
10
1
-60
1
R
T
T
I
-20
20
10
T
t
AV
j
60
[°C]
[µs]
100
100
140
1000
180
14 Typ. gate charge
V
16 Gate charge waveforms
Q
V
10
V
Q
8
6
4
2
0
0
V
I
IPB072N15N3 G
Q
20
Q
Q
gate
g
Q
40
[nC]
Q
IPP075N15N3 G
IPI075N15N3 G
60
Q
g ate
80