IRF640 Vishay, IRF640 Datasheet

MOSFET N-CH 200V 18A TO-220AB

IRF640

Manufacturer Part Number
IRF640
Description
MOSFET N-CH 200V 18A TO-220AB
Manufacturer
Vishay
Type
Power MOSFETr
Datasheet

Specifications of IRF640

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
180 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.18Ohm
Drain-source On-volt
200V
Gate-source Voltage (max)
±20V
Drain Current (max)
18A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Power Dissipation
125W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.18 Ohms
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
18 A
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Not Compliant
Other names
IRF640IR

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0
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91036
S-81241-Rev. A, 07-Jul-08
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 18 A, dI/dt ≤ 150 A/µs, V
= 50 V, starting T
(Ω)
TO-220
G
a
D
J
S
= 25 °C, L = 2.7 mH, R
c
a
a
DD
b
V
GS
≤ V
= 10 V
G
DS
, T
N-Channel MOSFET
J
Single
≤ 150 °C.
200
70
13
39
G
D
S
= 25 Ω, I
C
Power MOSFET
0.18
= 25 °C, unless otherwise noted
V
GS
AS
6-32 or M3 screw
at 10 V
= 18 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
TO-220
IRF640PbF
SiHF640-E3
IRF640
SiHF640
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
design,
- 55 to + 150
IRF640, SiHF640
LIMIT
300
± 20
200
580
125
1.0
5.0
1.1
18
11
72
18
13
10
low
d
Vishay Siliconix
on-resistance
www.vishay.com
lbf · in
UNIT
W/°C
N · m
RoHS*
V/ns
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
1

IRF640 Summary of contents

Page 1

... N-Channel MOSFET TO-220 IRF640PbF SiHF640-E3 IRF640 SiHF640 = 25 °C, unless otherwise noted ° 100 ° °C C for screw = 25 Ω (see fig. 12 ≤ 150 ° IRF640, SiHF640 Vishay Siliconix device design, low on-resistance SYMBOL LIMIT V 200 DS V ± 1.0 E 580 ...

Page 2

... IRF640, SiHF640 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91036 S-81241-Rev. A, 07-Jul- °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C IRF640, SiHF640 Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRF640, SiHF640 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91036 S-81241-Rev. A, 07-Jul-08 ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case V DS Vary t to obtain p required I AS D.U Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91036 S-81241-Rev. A, 07-Jul- 0.01 Ω IRF640, SiHF640 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRF640, SiHF640 Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Current regulator Same type as D.U.T. 50 kΩ 0.2 µ 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91036 ...

Page 7

... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRF640, SiHF640 Vishay Siliconix + + www.vishay.com 7 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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