IRF640 Vishay, IRF640 Datasheet - Page 2
![MOSFET N-CH 200V 18A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF640
Manufacturer Part Number
IRF640
Description
MOSFET N-CH 200V 18A TO-220AB
Manufacturer
Vishay
Type
Power MOSFETr
Datasheet
1.IRF640.pdf
(8 pages)
Specifications of IRF640
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
180 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.18Ohm
Drain-source On-volt
200V
Gate-source Voltage (max)
±20V
Drain Current (max)
18A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Power Dissipation
125W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.18 Ohms
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
18 A
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Not Compliant
Other names
IRF640IR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF640
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
IRF640-TSTU
Manufacturer:
SAMSUNG
Quantity:
467
Company:
Part Number:
IRF640A
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRF640B
Manufacturer:
N/A
Quantity:
20 000
IRF640, SiHF640
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
R
R
t
t
R
I
I
C
V
DS(on)
C
C
V
GS(th)
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
Q
DS
g
L
L
t
I
SM
t
thCS
thJA
thJC
oss
t
t
on
DS
SD
iss
rss
S
rr
fs
gs
gd
D
r
f
S
rr
g
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
V
R
J
DS
GS
GS
T
= 25 °C, I
G
Intrinsic turn-on time is negligible (turn-on is dominated by L
Reference to 25 °C, I
J
= 9.1 Ω, R
= 160 V, V
= 10 V
= 10 V
= 25 °C, I
V
V
V
V
V
f = 1.0 MHz, see fig. 5
TYP.
0.50
TEST CONDITIONS
DS
DD
DS
GS
DS
-
-
= 200 V, V
= V
= 100 V, I
F
= 0 V, I
= 50 V, I
V
V
= 18 A, dI/dt = 100 A/µs
V
GS
DS
S
D
GS
GS
GS
= 18 A, V
= ± 20 V
= 5.4 Ω, see fig. 10
I
= 25 V,
, I
D
= 0 V,
= 0 V, T
D
= 18 A, V
D
see fig. 6 and 13
D
= 250 µA
= 250 µA
D
GS
= 11 A
I
= 18 A,
D
D
= 0 V
= 11 A
GS
= 1 mA
J
G
G
= 125 °C
DS
b
= 0 V
=160 V,
b
MAX.
D
S
b
D
S
1.0
b
62
b
-
b
MIN.
200
2.0
6.7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Document Number: 91036
S-81241-Rev. A, 07-Jul-08
TYP.
1300
0.29
430
130
300
4.5
7.5
3.4
14
51
45
36
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.18
S
250
610
4.0
2.0
7.1
25
70
13
39
18
72
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nA
µA
nC
nH
µC
pF
ns
ns
Ω
V
V
S
A
V