NDS8435 Fairchild Semiconductor, NDS8435 Datasheet - Page 3

• Manufacturer Part Number: NDS8435
• Description: MOSFET P-CH 30V 7A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of NDS8435

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1500pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NDS8435TR

Electrical Characteristics
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
V
S
1. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
Notes:
SD
design while R
P
Typical R
D
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
t
a. 50
b. 105
c. 125
Scale 1 : 1 on letter size paper
JA
R
T
1a
J
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
J A
T
Parameter
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
o
CA
A
t
C/W when mounted on a 1 in
o
o
C/W when mounted on a 0.006 in
C/W when mounted on a 0.04 in
is determined by the user's board design.
R
J C
T
J
R
T
A
CA
t
I
2
D
t
2
pad of 2oz copper.
R
DS ON
(T
2
2
pad of 2oz copper.
pad of 2oz copper.
A
= 25°C unless otherwise noted)
T
J
1b
Conditions
V
GS
= 0 V, I
S
= -2.1 A
(Note 2)
1c
Min
Typ
-0.8
JC
Max
-2.1
-1.2
is guaranteed by
NDS8435 Rev. B2
Units
A
V